β-Ga2O3 – Science and Technology of Advanced Materials 日本語版

Rapid homoepitaxial growth of (011) β-Ga2O3 by HCl-based halide vapor phase epitaxy

Optical, magnetic and electronic device materials
2025.11.26
HCl-gas etching behavior of (001) β-Ga2O3 under oxygen supply

Optical, magnetic and electronic device materials
2025.09.03
Plasma-free anisotropic selective-area etching of β-Ga2O3 using forming gas under atmospheric pressure

Optical, magnetic and electronic device materials
2024.07.29